Growth and doping of bulk GaN by hydride vapor phase epitaxy

Zhang Yu-Min^{1, 2}, Wang Jian-Feng^{1, 2, †}, Cai De-Min², Ren Guo-Qiang¹, Xu Yu^{1, 2}, Wang Ming-Yue^{1, 2}, Hu Xiao-Jian^{1, 2}, Xu Ke^{1, 2, ‡}

(a) OM, (b) SEM, and (c) CL image of a pit halo, respectively. (d) Raman spectra at typical positions of a pit halo. The points labeled as P0–P6 are shown in Fig. 1(c). (e) The carrier distribution in a pit halo. The ordinate origin refers to the left edge of a pit halo. (f) The resistance distribution near the edge of a pit halo. The ordinate origin refers to the left edge of a pit halo.