Growth and doping of bulk GaN by hydride vapor phase epitaxy

Zhang Yu-Min^{1, 2}, Wang Jian-Feng^{1, 2, †}, Cai De-Min², Ren Guo-Qiang¹, Xu Yu^{1, 2}, Wang Ming-Yue^{1, 2}, Hu Xiao-Jian^{1, 2}, Xu Ke^{1, 2, ‡}

(a) Typical PL spectrum of Fe-doped GaN. The enlarged spectrum is shown in panel (b) the near-IR region and (c) the NBE region.