Growth and doping of bulk GaN by hydride vapor phase epitaxy

Zhang Yu-Min^{1, 2}, Wang Jian-Feng^{1, 2, †}, Cai De-Min², Ren Guo-Qiang¹, Xu Yu^{1, 2}, Wang Ming-Yue^{1, 2}, Hu Xiao-Jian^{1, 2}, Xu Ke^{1, 2, ‡}

Low temperature (4 K) photoluminescence spectrum of GaN with Ge concentration approximately 2.6 × 10¹⁹ cm⁻³.