Growth and doping of bulk GaN by hydride vapor phase epitaxy
Zhang Yu-Min1, 2, Wang Jian-Feng1, 2, †, Cai De-Min2, Ren Guo-Qiang1, Xu Yu1, 2, Wang Ming-Yue1, 2, Hu Xiao-Jian1, 2, Xu Ke1, 2, ‡
       

(a) The relationship between mobility and temperature for GaN with carrier concentration 1.1 × 1016 cm−3 and 6.5 × 1018 cm−3 respectively. (b) The relationship between mobility and carrier concentration for Si-doped GaN with dislocation densities of 1.0 × 108 cm−2 and 5.0 × 106 cm−2 respectively. The solid line is the theoretical value of mobility at the corresponding carrier concentration.[71]