Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device

Ye Bing^{1, †}, Mo Li-Hua^{1, 2}, Liu Tao³, Luo Jie¹, Li Dong-Qing^{1, 2}, Zhao Pei-Xiong^{1, 2}, Cai Chang^{1, 2}, He Ze^{1, 2}, Sun You-Mei¹, Hou Ming-Dong¹, Liu Jie^{1, ‡}

Proton-induced SEU cross-section curves, showing (a) Geant4 simulations for single-layered SRAM model in this paper and (b) testing result for 65-nm SRAM in Ref. [14].