Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Liao Wen-Yuan^{1, 2}, Li Jian³, Li Chuan-Chuan^{2, 3}, Guo Xiao-Feng¹, Guo Wen-Tao¹, Liu Wei-Hua^{1, 2}, Zhang Yang-Jie^{1, 2}, Wei Xin^{2, 3}, Tan Man-Qing^{1, 2, †}

(a) L–I–V characteristic of 2.7-μm device, (b) L–I–V characteristic of 4.4-μm device, (c) variation of resistance with aperture size, and (d) plots of wavelength versus current of devices with different oxide apertures at room temperature.