Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Liao Wen-Yuan^{1, 2}, Li Jian³, Li Chuan-Chuan^{2, 3}, Guo Xiao-Feng¹, Guo Wen-Tao¹, Liu Wei-Hua^{1, 2}, Zhang Yang-Jie^{1, 2}, Wei Xin^{2, 3}, Tan Man-Qing^{1, 2, †}

The L–I and V–I characteristics of fabricated VCSEL devices with various oxide apertures. Insets show top view of oxidation aperture at (a) 5.9 μm, 7 μm and (b) 8 μm, 9 μm, respectively.