Optical and electrical properties of InGaZnON thin films<xref rid="cpb_29_1_018105fn1" ref-type="fn">*</xref><fn id="cpb_29_1_018105fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61674107), Shenzhen Key Lab Fund, China (Grant No. ZDSYS 20170228105421966), and Science and Technology Plan of Shenzhen, China (Grant No. JCYJ20170302150335518).</p></fn>

Optical and electrical properties of InGaZnON thin films**

Project supported by the National Natural Science Foundation of China (Grant No. 61674107), Shenzhen Key Lab Fund, China (Grant No. ZDSYS 20170228105421966), and Science and Technology Plan of Shenzhen, China (Grant No. JCYJ20170302150335518).

Yao Jian Ke, Ye Fan^†, Fan Ping

(a), (b) Linear refractive index (n₁); (c), (d) Cole–Cole plots of dielectric functions; (e), (f) absorption coefficients (α); (g), (h) band gap (E_g); and (i) relation of plasma energy (E_p) with N_e for IGZON thin films.