Optical and electrical properties of InGaZnON thin films<xref rid="cpb_29_1_018105fn1" ref-type="fn">*</xref><fn id="cpb_29_1_018105fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 61674107), Shenzhen Key Lab Fund, China (Grant No. ZDSYS 20170228105421966), and Science and Technology Plan of Shenzhen, China (Grant No. JCYJ20170302150335518).</p></fn>

Optical and electrical properties of InGaZnON thin films**

Project supported by the National Natural Science Foundation of China (Grant No. 61674107), Shenzhen Key Lab Fund, China (Grant No. ZDSYS 20170228105421966), and Science and Technology Plan of Shenzhen, China (Grant No. JCYJ20170302150335518).

Yao Jian Ke, Ye Fan^†, Fan Ping

The O 1s XPS spectra of IGZON thin films deposited at (a) P_N2 of 10% and T_s of RT, 300 °C, and 400 °C; (b) P_N2 of 20% and T_s of RT, 300 °C, and 400 °C. N 1s XPS spectra of IGZON thin films deposited at (c) P_N2 of 10% and T_s of RT, 300 °C, and 400 °C; (d) P_N2 of 20% and T_s of RT, 300 °C, and 400 °C.