Epitaxial growth and air-stability of monolayer Cu<sub>2</sub>Te<xref rid="cpb_29_1_018104fn1" ref-type="fn">*</xref><fn id="cpb_29_1_018104fn1"><label>*</label><p>Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YF A0305800), the National Natural Science Foundation of China (Grant Nos. 61888102, 11604373, 61622116, and 51872284), the CAS Pioneer Hundred Talents Program, China, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), Beijing Nova Program, China (Grant No. Z181100006218023), and the University of Chinese Academy of Sciences. A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics. Computational resources were provided by the National Supercomputing Center in Tianjin.</p></fn>

Epitaxial growth and air-stability of monolayer Cu₂Te**

Project supported by the National Key Research & Development Program of China (Grant Nos. 2016YFA0202300 and 2018YF A0305800), the National Natural Science Foundation of China (Grant Nos. 61888102, 11604373, 61622116, and 51872284), the CAS Pioneer Hundred Talents Program, China, the Strategic Priority Research Program of Chinese Academy of Sciences (Grant Nos. XDB30000000 and XDB28000000), Beijing Nova Program, China (Grant No. Z181100006218023), and the University of Chinese Academy of Sciences. A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics. Computational resources were provided by the National Supercomputing Center in Tianjin.

Qian K¹, Gao L¹, Li H¹, Zhang S¹, Yan J H¹, Liu C², Wang J O², Qian T^{1, 3}, Ding H^{1, 3}, Zhang Y Y^{1, 3}, Lin X^{1, 3, ‡}, Du S X^{1, 3, †}, Gao H-J^{1, 3}

ARPES experimental results and DFT calculated results of the electronic structure of the monolayer Cu₂Te. (a) The electronic band structure measured by ARPES along the Γ–K direction. (b) The DFT calculated band structure along the Γ–K direction. (c) Brillouin zone of the monolayer Cu₂Te.