Electronic structure of correlated topological insulator candidate YbB<sub>6</sub> studied by photoemission and quantum oscillation

Electronic structure of correlated topological insulator candidate YbB₆ studied by photoemission and quantum oscillation

Zhang T¹, Li G^{2, 3}, Sun S C¹, Qin N¹, Kang L¹, Yao S H⁴, Weng H M^{3, 5, 6, 7, 8}, Mo S K⁹, Li L², Liu Z K^{10, 11}, Yang L X^{1, 12}, Chen Y L^{1, 10, 11, 13, †}

The origin of the surface states. (a) Schematic of the scenario proposed in Ref. [12], where the band inversion and inverted band gap take place between the Yb_4f and Yb_5d bands. (b) Schematic of the scenario where the band inversion and inverted band gap take place between the Yb_5d and B_2p bands. (c) Wide range photoemission intensity plot along X¯−Γ¯−X¯. Curves on top show the ab initio calculation results with on-site Coulomb repulsion energy U = 8 eV. SSB: surface state band. (d) Zoom-in plots of ARPES spectra in the blue and orange rectangles in panel (c).