Electronic structure of correlated topological insulator candidate YbB<sub>6</sub> studied by photoemission and quantum oscillation

Electronic structure of correlated topological insulator candidate YbB₆ studied by photoemission and quantum oscillation

Zhang T¹, Li G^{2, 3}, Sun S C¹, Qin N¹, Kang L¹, Yao S H⁴, Weng H M^{3, 5, 6, 7, 8}, Mo S K⁹, Li L², Liu Z K^{10, 11}, Yang L X^{1, 12}, Chen Y L^{1, 10, 11, 13, †}

An overview of YbB₆. (a) Crystal structure of YbB₆. (b) The 3D and surface projected 2D Brillouin zones of YbB₆, red and cyan dots indicate the high-symmetry points. (c) and (d) Laue pattern and powder x-ray diffraction showing the high quality of the crystals. (e) Core level photoemission spectrum showing the prominent 4fand 5p-electron characteristic peaks of Yb. The inset in (f) shows a flat sample surface along (001) direction. (f) Fermi surface of YbB₆ in the first BZ obtained by integrating ARPES intensity in an energy window of 20 meV around E_F. The blue lines indicate the projected surface BZ. (g) Zoom-in plots of FS maps measured using different photon energies at both Γ¯ and X¯.