Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions<fn id="cpb_29_1_017303fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.</p></fn>

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions*

Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.

Li Yan-Qi^†, Kan Hong-Jun^†, Miao Yuan-Yuan, Yang Lei, Qiu Shuai, Zhang Guang-Ping, Ren Jun-Feng, Wang Chuan-Kui, Hu Gui-Chao^‡

The band tunneling sketch of the ferromagnet/OF/metal junction: (a) P configuration at 0.6 V, (b) AP configuration at 0.6 V, (c) P configuration at −0.6 V, (d) AP configuration at −0.6 V. Red (blue) upward (downward) arrows and lines stand for the spin-up (spin-down) magnetic moments and levels. Plus (minus) sign denotes the polarity of the bias.