Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions<fn id="cpb_29_1_017303fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.</p></fn>

Tunneling magnetoresistance in ferromagnet/organic-ferromagnet/metal junctions*

Project supported by the National Natural Science Foundation of China (Grant Nos. 11974215, 11704230, 11674197, and 11874242), the Natural Science Foundation of Shandong Province, China (Grant No. ZR2019MA043), and the Taishan Scholar Project of Shandong Province, China.

Li Yan-Qi^†, Kan Hong-Jun^†, Miao Yuan-Yuan, Yang Lei, Qiu Shuai, Zhang Guang-Ping, Ren Jun-Feng, Wang Chuan-Kui, Hu Gui-Chao^‡

(a) The charge current with bias in P and AP spin configurations of the Co/OF/Au junction. (b) The TMR of the device versus bias.