Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer<xref rid="cpb_29_1_017301fn1" ref-type="fn">*</xref><fn id="cpb_29_1_017301fn1"><label>*</label><p>Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project (Grant No. U1604263).</p></fn>

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer**

Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program, China (Grant No. 2016YFE0118400), the Key Project of Science and Technology of Henan Province, China (Grant No. 172102410062), and the National Natural Science Foundation of China and Henan Provincial Joint Fund Key Project (Grant No. U1604263).

Wang Yi-Fu^{1, 2, 3}, Niass Mussaab I^{1, 2, 3}, Wang Fang^{1, 2, 3, †}, Liu Yu-Huai^{1, 2, 3, ‡}

(a) Logarithmic electron concentration and logarithmic hole concentration, and (b) peak radiative recombination rate in the middle QW of active region of samples A, B, C, and D.