Broadband visible light absorber based on ultrathin semiconductor nanostructures<xref rid="cpb_29_1_014201fn1" ref-type="fn">*</xref><fn id="cpb_29_1_014201fn1"><label>*</label><p>Project supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2018A030313854 and 2016A030313851).</p></fn>

Broadband visible light absorber based on ultrathin semiconductor nanostructures**

Project supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2018A030313854 and 2016A030313851).

Huang Lin-Jin, Li Jia-Qi, Lu Man-Yi, Chen Yan-Quan, Zhu Hong-Ji, Liu Hai-Ying^†

(a) and (c) Normalized electric intensity distributions in (a) xoy plane and (b) xoz plane for the absorption bands at λ₁ and λ₃, respectively. (b) and (d) Normalized magnetic intensity distributions in (a) xoy plane and (b) xoz plane for the absorption bands at λ₂ and λ₄, respectively.