Broadband visible light absorber based on ultrathin semiconductor nanostructures<xref rid="cpb_29_1_014201fn1" ref-type="fn">*</xref><fn id="cpb_29_1_014201fn1"><label>*</label><p>Project supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2018A030313854 and 2016A030313851).</p></fn>

Broadband visible light absorber based on ultrathin semiconductor nanostructures**

Project supported by the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2018A030313854 and 2016A030313851).

Huang Lin-Jin, Li Jia-Qi, Lu Man-Yi, Chen Yan-Quan, Zhu Hong-Ji, Liu Hai-Ying^†

(a) Schematic diagram of hexagonal “GaAs nanoring array” broadband visible light absorber. (b) Magnified one of its units. The absorber consisting of hexagonal GaAs nanoring array and a uniform gold substrate. The parameters are set to be P = 300 nm, D = 220 nm, d = 120 nm, and h = 60 nm.