Low temperature photoluminescence study of GaAs defect states<xref rid="cpb_29_1_010703fn1" ref-type="fn">*</xref><fn id="cpb_29_1_010703fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).</p></fn>

Low temperature photoluminescence study of GaAs defect states**

Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).

Huang Jia-Yao¹, Shang Lin¹, Ma Shu-Fang^{1, ‡}, Han Bin¹, Wei Guo-Dong¹, Liu Qing-Ming¹, Hao Xiao-Dong¹, Shan Heng-Sheng¹, Xu Bing-She^{1, 2, †}

PL spectra of sample M2, the Si-doped GaAs crystal. (a) The normalized PL spectra taken at various temperatures. (b) The normalized PL spectra taken at various excitation power at 77 K. The direction of the arrow represents an increase in the excitation power.