Low temperature photoluminescence study of GaAs defect states<xref rid="cpb_29_1_010703fn1" ref-type="fn">*</xref><fn id="cpb_29_1_010703fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).</p></fn>

Low temperature photoluminescence study of GaAs defect states**

Project supported by the National Natural Science Foundation of China (Grant No. 21972103), the National Key Research and Development Program of China (Grant No. 2016YFB040183), and Research and Development Program of Shanxi Province, China (Grant No. 201703D111026).

Huang Jia-Yao¹, Shang Lin¹, Ma Shu-Fang^{1, ‡}, Han Bin¹, Wei Guo-Dong¹, Liu Qing-Ming¹, Hao Xiao-Dong¹, Shan Heng-Sheng¹, Xu Bing-She^{1, 2, †}

Photoluminescence spectra of the Te and Si-doped GaAs samples at 77 K: (a) sample M1, Te-doped GaAs crystal, (b) sample M2, Si-doped GaAs crystal, (c) sample M3, Si-doped GaAs crystal.