Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors<xref rid="cpb_28_12_128502fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128502fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).</fn>

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors**

Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).

Hong Cheng-Yun¹, Huang Gang-Feng¹, Yao Wen-Wen², Deng Jia-Jun², Liu Xiao-Long^{1, 3, †}

(a) Output characteristic of the device based on Bi₂O₂Se uniform thin film, exhibiting Ohmic contact with the Pd/Au electrodes. Inset shows device OM image with scale bar of 20 μm, (b) time-sampling results of the device under laser on/off conditions, and (c) single exponential fitting of the decay edge with lifetime of 25 ms.