Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors<xref rid="cpb_28_12_128502fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128502fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).</fn>

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors**

Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).

Hong Cheng-Yun¹, Huang Gang-Feng¹, Yao Wen-Wen², Deng Jia-Jun², Liu Xiao-Long^{1, 3, †}

(a) Output characteristics of Bi₂O₂Se IPJ in Fig. 4, demonstrating the electrical states under dark condition and 640-nm laser illumination from 1 mW/cm² to 5 mW/cm², and output curves are in logarithmic coordinates, (b) photocurrent versus light power density with voltage bias of 1 V, (c) time-dependent device current with 640-nm laser on/off incident modulation and voltage of 1 V, (d) and (e) single exponential fitting of dynamic response of photocurrent for (d) rise and (e) decay edges, with τ_rise and τ_decay being 2.5 μs and 4.8 μs, respectively.