Thickness-modulated in-plane Bi2O2Se homojunctions for ultrafast high-performance photodetectors<xref rid="cpb_28_12_128502fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128502fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).</fn>

Thickness-modulated in-plane Bi₂O₂Se homojunctions for ultrafast high-performance photodetectors**

Project supported by the National Natural Science Foundation of China (Grant No. 61705066), the Open Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Grant No. IPOC2018B004), and the National Key Research and Development Program, China (Grant No. 2016YFA0202401).

Hong Cheng-Yun¹, Huang Gang-Feng¹, Yao Wen-Wen², Deng Jia-Jun², Liu Xiao-Long^{1, 3, †}

(a) The OM image of as-fabricated device with 3-layered Bi₂O₂Se IPJ; (b) and (c) the AFM images of region outlined by yellow square and purple square in panel (a) respectively; (d) and (e) Height profiles along the two dash lines in panels (b) and (c); (f) and (g) the output characteristic curve of device in panel (a) with both linear and logarithmic coordinates. Inset of panel (f) shows schematic device structure.