High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application<xref rid="cpb_28_12_128501fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128501fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).</p></fn>

High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

Zhao Yue^{1, 2}, Wang Nan^{1, 2}, Yu Kai^{1, 2}, Zhang Xiaoming³, Li Xiuli^{1, 2}, Zheng Jun^{1, 2}, Xue Chunlai^{1, 2}, Cheng Buwen^{1, 2}, Li Chuanbo^{3, 4, †}

Optical responsivity and spectrum response of GeSn photodetector as a function of wavelength. Devices were measured by lasers (a tunable laser between 1500 nm to 1630 nm, a laser at 2000 nm) and an FTIR optical spectrometer. The data are shown in green scatter plots and blue curve, respectively (all measurements were conducted under 3 V reverse bias voltage).