High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application<xref rid="cpb_28_12_128501fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128501fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).</p></fn>

High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

Zhao Yue^{1, 2}, Wang Nan^{1, 2}, Yu Kai^{1, 2}, Zhang Xiaoming³, Li Xiuli^{1, 2}, Zheng Jun^{1, 2}, Xue Chunlai^{1, 2}, Cheng Buwen^{1, 2}, Li Chuanbo^{3, 4, †}

(a) The I_dark–V_bias characteristics of GeSn photodetectors with various mesa sizes. (b) Dark-current density (J_dark) versus 1/D under 1 V reverse bias.