High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application<xref rid="cpb_28_12_128501fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128501fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).</p></fn>

High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

Zhao Yue^{1, 2}, Wang Nan^{1, 2}, Yu Kai^{1, 2}, Zhang Xiaoming³, Li Xiuli^{1, 2}, Zheng Jun^{1, 2}, Xue Chunlai^{1, 2}, Cheng Buwen^{1, 2}, Li Chuanbo^{3, 4, †}

HR-XRD ω–2θ scanning of the Ge_0.094Sn_0.06 sample grown on Ge buffered Si(100) substrate at (004) orientation. (b) TEM image of the Ge_0.94Sn_0.06 sample (the white lines in the image represent the interfaces of Ge_0.94Sn_0.06/Ge buffer and Ge buffer/Si, respectively). (c) HR-TEM image of the Ge_0.94Sn_0.06 layer. (d) HR-TEM image of the interface between GeSn layer and Ge buffer layer.