High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application<xref rid="cpb_28_12_128501fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128501fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).</p></fn>

High performance silicon-based GeSn p–i–n photodetectors for short-wave infrared application**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500), the National Natural Science Foundation of China (Grant Nos. 61675195, 61934007, and 61974170), Opened Fund of the State Key Laboratory of Integrated Optoelectronics, China (Grant No. IOSKL2018KF17), and Beijing Natural Science Foundation, China (Grant No. 4162063).

Zhao Yue^{1, 2}, Wang Nan^{1, 2}, Yu Kai^{1, 2}, Zhang Xiaoming³, Li Xiuli^{1, 2}, Zheng Jun^{1, 2}, Xue Chunlai^{1, 2}, Cheng Buwen^{1, 2}, Li Chuanbo^{3, 4, †}

Comparison of dark current density for GeSn photodetectors at a reverse bias of 1 V in different groups.^[15–28] Different colors of the icons represent the different growth methods of GeSn alloy, red, purple, and blue refer to the growth methods of MBE, magnetron sputtering epitaxy, and CVD, respectively. Solid or hollow icons refer to the GeSn materials grown on Si substrate or on Ge substrate, on which devices were fabricated.