Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics<xref rid="cpb_28_12_128101fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128101fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant No. 61774064).</fn>

Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics**

Project supported by the National Natural Science Foundation of China (Grant No. 61774064).

Chen Jian-Ying¹, Zhao Xin-Yuan², Liu Lu², Xu Jing-Ping^{2, †}

Surface topography of gate dielectrics for (a) HfO₂ sample, (b) NH₃-HfO₂ sample, (c) only thermally-annealing HfO₂ sample, (d) Al₂O₃/HfO₂ sample, (d) NH₃-Al₂O₃/HfO₂ sample, and (f) only thermally-annealing Al₂O₃/HfO₂ sample.