Improved performance of back-gate MoS2 transistors by NH3-plasma treating high-k gate dielectrics<xref rid="cpb_28_12_128101fn1" ref-type="fn">*</xref><fn id="cpb_28_12_128101fn1"><label>*</label>Project supported by the National Natural Science Foundation of China (Grant No. 61774064).</fn>

Improved performance of back-gate MoS₂ transistors by NH₃-plasma treating high-k gate dielectrics**

Project supported by the National Natural Science Foundation of China (Grant No. 61774064).

Chen Jian-Ying¹, Zhao Xin-Yuan², Liu Lu², Xu Jing-Ping^{2, †}

Output characteristics of the MoS₂ transistors with or without NH₃-plasma treatment on (a) HfO₂ gate dielectric and (b) Al₂O₃/HfO₂ stack gate dielectric. V_gs increases from 1 V to 3 V in steps of 1 V.