Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content*

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500) and the National Natural Science Foundation of China (Grant Nos. 61851406 and 61274112).

Zhou Lin1, Liu Lu1, Deng Yu-Heng1, Li Chun-Xia2, Xu Jing-Ping1, †
       

Typical HF CV curves of four samples with different amounts of Gd.