Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content<xref rid="cpb_28_12_127703fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127703fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500) and the National Natural Science Foundation of China (Grant Nos. 61851406 and 61274112).</p></fn>

Improved interfacial properties of HfGdON gate dielectric Ge MOS capacitor by optimizing Gd content**

Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200500) and the National Natural Science Foundation of China (Grant Nos. 61851406 and 61274112).

Zhou Lin¹, Liu Lu¹, Deng Yu-Heng¹, Li Chun-Xia², Xu Jing-Ping^{1, †}

XPS spectrum of HfGdON/LaTaON/Ge MOS with Gd content of ∼ 13.16% for (a) La 3d and (b) Ta 4f. Other samples with Gd incorporation have similar results.