Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor<xref rid="cpb_28_12_127302fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127302fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503).</p></fn>

Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503).

Zhang Xiao-Di^{1, 2}, Han Wei-Hua^{1, 2, †}, Liu Wen^{1, 2}, Zhao Xiao-Song^{1, 2}, Guo Yang-Yan^{1, 2}, Yang Chong^{1, 2}, Chen Jun-Dong^{1, 2}, Yang Fu-Hua^{1, 2, 3}

(a) The I_d–V_g and g_m–V_g characteristics of the device at T = 6 K by varying the bias V_d from 0.2 mV to 1.0 mV with the step of 0.2 mV. (b) I_d–V_g and and g_m–V_g curves of the device at T = 6 K by varying the bias V_d from 2 mV to 10 mV.