Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor<xref rid="cpb_28_12_127302fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127302fn1"><label>*</label><p>Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503).</p></fn>

Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor**

Project supported by the National Key R&D Program of China (Grant No. 2016YFA0200503).

Zhang Xiao-Di^{1, 2}, Han Wei-Hua^{1, 2, †}, Liu Wen^{1, 2}, Zhao Xiao-Song^{1, 2}, Guo Yang-Yan^{1, 2}, Yang Chong^{1, 2}, Chen Jun-Dong^{1, 2}, Yang Fu-Hua^{1, 2, 3}

(a) Temperature dependence of I_d–V_g characteristics (V_d = 10 mV) for silicon JNT (6–70 K). Inset: stability diagram of drain current I_d vs. gate and bias voltages at T = 6 K. (b) The transconductance g_m versus gate voltage V_g with V_d = 10 mV from 6 K to 70 K. The transconductance curves have been shifted by an offset 2 nS for clarity. (c) Activation energy E_a estimated from Arrhenius plots as a function of V_g at V_d = 10 mV in two different temperature regions. Inset: the current range narrowed less than 0.06 nA for the stability diagram in the inset of (a) for clarify at the low V_g. (d) The Arrhenius plots of conductance at various gate voltages corresponding to the marked V_g by arrows in (a).