Electrically tunable spin diode effect in a tunneling junction of quantum dot<xref rid="cpb_28_12_127202_fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127202_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).</p></fn>

Electrically tunable spin diode effect in a tunneling junction of quantum dot**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Peng Xukai¹, Zhang Zhengzhong^{2, †}

(a) Tunneling current as a function of bias voltage at different lead spin polarizations with gate voltage ε_d = 0 and ε_d = −U. (b) Rectification coefficient η as function of lead spin polarization P under different equilibrium temperatures T, with ε_d = 0 and |V| = 0.5.