Electrically tunable spin diode effect in a tunneling junction of quantum dot<xref rid="cpb_28_12_127202_fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127202_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).</p></fn>

Electrically tunable spin diode effect in a tunneling junction of quantum dot**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Peng Xukai¹, Zhang Zhengzhong^{2, †}

The tunneling current I as a function of bias voltage V and Zeeman splitting energy ΔB in HMF–QD–NM structure with equal temperatures T = 0.01 and different gate voltages (a) ε_d = 0 and (b) ε_d = −U. The NDC can be shifted to a higher bias regime by the positive or negative external magnetic field’s direction, with respect to different tunneling regimes at (c) ε_d = 0 and (d) ε_d = −U.