Electrically tunable spin diode effect in a tunneling junction of quantum dot<xref rid="cpb_28_12_127202_fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127202_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).</p></fn>

Electrically tunable spin diode effect in a tunneling junction of quantum dot**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Peng Xukai¹, Zhang Zhengzhong^{2, †}

The probabilities of the QD’s states at the gate voltage (a) ε_d = 0 and (b) ε_d = −U. For the single-electron tunneling regime, the electron current can transport from HMF lead to NM lead direction (c) and block in the backward direction (d). For the double-electron tunneling regime, the electron can hop from NM lead to HMF lead direction (f) and block in the backward direction (e).