Electrically tunable spin diode effect in a tunneling junction of quantum dot<xref rid="cpb_28_12_127202_fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127202_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).</p></fn>

Electrically tunable spin diode effect in a tunneling junction of quantum dot**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Peng Xukai¹, Zhang Zhengzhong^{2, †}

The tunneling current I as a function of bias voltage V and gate voltage (QD’s level) ε_d for(a) NM–QD–NM structure and (b) HMF–QD–NM structure at temperature T = 0.01. For the HMF–QD–NM structure, the I–V curves exhibit diode features and can be tuned or even reversed by different gate voltages (c) ε_d = 0 and (d) ε_d = −U.