Electrically tunable spin diode effect in a tunneling junction of quantum dot<xref rid="cpb_28_12_127202_fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127202_fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).</p></fn>

Electrically tunable spin diode effect in a tunneling junction of quantum dot**

Project supported by the National Natural Science Foundation of China (Grant Nos. 11404322, 31400810, and 11704180), the Postdoctoral Science Foundation of China (Grant No. 2013M541635), and the Postdoctoral Science Foundation of Jiangsu Province, China (Grant No. 1301018B).

Peng Xukai¹, Zhang Zhengzhong^{2, †}

The model setup. (a) Illustration showing a possible realization of a QD-based current diode device employing one half-metallic ferromagnetic lead and one nonmagnetic lead. (b) Schematic energy diagram of spin-dependent electron tunneling in this nano-junction.