Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time*

Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Liu Qing, Pu Hong-Bin, Wang Xi
       

(a) Electrical field distribution in new 4H-SiC GTO thyristor and (b) recombination rate distribution during turn-off state for different structures.