Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time*

Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Liu Qing, Pu Hong-Bin, Wang Xi
       

Plots of minority carrier (electron/hole) density versus distance in thin p-base/n-base of SiC GTO thyristors in turn-on process.