Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time<xref rid="cpb_28_12_127201fn1" ref-type="fn">*</xref><fn id="cpb_28_12_127201fn1"><label>*</label><p>Project supported by the National Natural Science Foundation of China (Grant No. 51677149).</p></fn>

Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time**

Project supported by the National Natural Science Foundation of China (Grant No. 51677149).

Liu Qing, Pu Hong-Bin^†, Wang Xi

(a) Forward J–V characteristics of structures, and (b) distribution of holes/electrons in n/p drift layer at on-state current density of 100 A/cm².