Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).
Test circuit of dynamic characteristics of 4H-SiC GTO thyristor.
Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time Project supported by the National Natural Science Foundation of China (Grant No. 51677149). |
Test circuit of dynamic characteristics of 4H-SiC GTO thyristor. |
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