Ultra-high voltage 4H-SiC gate turn-off thyristor for low switching time
Project supported by the National Natural Science Foundation of China (Grant No. 51677149).
Cross-sectional schematic diagram of (a) proposed 4H-SiC n-GTO thyristor, (b) conventional p-GTO thyristor, and (c) simple fabrication process of proposed n-GTO thyristor.
