Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction<xref rid="cpb_28_12_126801fn1" ref-type="fn">*</xref><fn id="cpb_28_12_126801fn1"><label>*</label>Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).</fn>

Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction**

Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).

Zhao Jia-Jia¹, Zhang Jin-Shuai², Zhang Feng³, Wang Wei^{1, †}, He Hai-Rong¹, Cai Wang-Yang¹, Wang Jin¹

I–V curves in Figs. 2(a) and 2(c) to reveal their conduction mechanisms: (a) ln(I) versus ln(V) at HRS and (b) ln(I) versus Sqrt(V) at LRS in positive bias range (0 V–4 V), (c) ln(I) versus ln(V) in negative bias range (−4 V–0 V), and (d) ln(I) versus ln(V) in positive bias region under illumination.