Electro-optical dual modulation on resistive switching behavior in BaTiO3/BiFeO3/TiO2 heterojunction<xref rid="cpb_28_12_126801fn1" ref-type="fn">*</xref><fn id="cpb_28_12_126801fn1"><label>*</label>Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).</fn>

Electro-optical dual modulation on resistive switching behavior in BaTiO₃/BiFeO₃/TiO₂ heterojunction**

Project supported by the Scientific Research Program of Hunan Provincial Education Department, China (Grant No. 18C0232) and the International Cooperative Extension Program of Changsha University of Science and Technology, China (Grant No. 2019IC35).

Zhao Jia-Jia¹, Zhang Jin-Shuai², Zhang Feng³, Wang Wei^{1, †}, He Hai-Rong¹, Cai Wang-Yang¹, Wang Jin¹

(a) The I–V curves on semi-log scales for as-prepared Pt/BFT/FTO samples with 25 consecutive cycles, (b) device retention and fatigue characteristics at ON/OFF states, (c) RS characteristic under dark field and light conditions for as-prepared samples by increasing voltage sweep range, with black symbols being for the I–V curves in dark, and the red symbols the I–V curves under illumination, and (d) variations in the junction resistances of the heterojunction with ±4 V pulse voltage measured at 0.3 V in dark and illumination (illu.) conditions.