Structural and electrical transport properties of Dirac-like semimetal PdSn<sub>4</sub> under high pressure<xref rid="cpb_28_12_126202fn1" ref-type="fn">*</xref><fn id="cpb_28_12_126202fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. U1632275, 11574323, 11874362, 11704387, and 11804344), the Natural Science Foundation of Anhui Province, China (Grant Nos. 1908085QA18, 1708085 QA19, and 1808085MA06), the Major Program of Development Foundation of Hefei Center for Physical Science and Technology, China (Grant No. 2018ZYFX002), and the Users with Excellence Project of Hefei Science Center of the Chinese Academy of Sciences (Grant No. 2018HSC-UE012).</p></fn>

Structural and electrical transport properties of Dirac-like semimetal PdSn₄ under high pressure**

Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. U1632275, 11574323, 11874362, 11704387, and 11804344), the Natural Science Foundation of Anhui Province, China (Grant Nos. 1908085QA18, 1708085 QA19, and 1808085MA06), the Major Program of Development Foundation of Hefei Center for Physical Science and Technology, China (Grant No. 2018ZYFX002), and the Users with Excellence Project of Hefei Science Center of the Chinese Academy of Sciences (Grant No. 2018HSC-UE012).

Zhang Bowen^{1, 2}, An Chao^{3, 4, †}, Zhou Yonghui¹, Chen Xuliang¹, Zhou Ying³, Chen Chunhua^{1, 2}, Yuan Yifang^{1, 2}, Yang Zhaorong^{1, 3, 5, ‡}

(a) Temperature-dependent resistance of PdSn₄ in the pressure range of 3.2 GPa to 52.0 GPa from 5 K to 300 K. (b) Selected fitting results of R–T curves by using the power law. (c) The residual resistance R₀ as a function of pressure.