Structural and electrical transport properties of Dirac-like semimetal PdSn4 under high pressure Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFA0305700 and 2016YFA0401804), the National Natural Science Foundation of China (Grant Nos. U1632275, 11574323, 11874362, 11704387, and 11804344), the Natural Science Foundation of Anhui Province, China (Grant Nos. 1908085QA18, 1708085 QA19, and 1808085MA06), the Major Program of Development Foundation of Hefei Center for Physical Science and Technology, China (Grant No. 2018ZYFX002), and the Users with Excellence Project of Hefei Science Center of the Chinese Academy of Sciences (Grant No. 2018HSC-UE012). |
(a) Crystal structure of PdSn4, (b) XRD pattern of PdSn4 single crystal. The reflection (0l0) is the as-grown crystal face. The upper-right inset shows an optical image of a PdSn4 single crystal. Typical size of the sample is 2 mm× 2 mm× 1 mm. (c) Energy dispersive spectra of PdSn4 single crystal. (d) Temperature-dependent resistivity of PdSn4 single crystal with current along the ac plane. (e) Temperature dependence of the fast Fourier transformed dHvA data for H∥b. Inset shows the raw dHvA data. |