Interlayer distance effects on absorption coefficient and refraction index change in p-type double-<i>δ</i>-doped GaAs quantum wells<xref rid="cpb_28_12_124207fn1" ref-type="fn">*</xref><fn id="cpb_28_12_124207fn1"><label>*</label><p>Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México.</p></fn>

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells**

Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México.

Noverola-Gamas H^{1, 2}, Gaggero-Sager L M^{3, †}, Oubram O⁴

(a) linear, (b) non-linear and (c) total relative refractive index change as a function of the photon energy. In this figure, was used the same parameters in Fig. 3.