Interlayer distance effects on absorption coefficient and refraction index change in p-type double-<i>δ</i>-doped GaAs quantum wells<xref rid="cpb_28_12_124207fn1" ref-type="fn">*</xref><fn id="cpb_28_12_124207fn1"><label>*</label><p>Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México.</p></fn>

Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells**

Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México.

Noverola-Gamas H^{1, 2}, Gaggero-Sager L M^{3, †}, Oubram O⁴

Potential profile, levels energy and waves function for (a) d = 10 Å, (b) d = 25 Å and (c) d = 50 Å respectively. For both cases the concentration of impurities in the layer is ρ_2D = 1 × 10¹³ cm⁻². In each figure, the levels corresponding to heavy holes (hh) and light holes (lh) are indicated.