Interlayer distance effects on absorption coefficient and refraction index change in p-type double-δ-doped GaAs quantum wells*

Project supported by PISA 2016–1 UJAT and PRODEP Folio UJAT-245 of México.

Noverola-Gamas H1, 2, Gaggero-Sager L M3, †, Oubram O4
       

(a) Linear, (b) nonlinear and (c) total relative absorption coefficient as a function of the incident photon energy for different interlayer distance d = 10 Å, 25 Å and 50 Å. It includes the reference value (black line) for calculations associated with the 1–0 transition in hh. The concentration of impurities in the layer is ρ2D = 1 × 1013 cm−2. We use 0.1 MW · cm−2 for the incident light intensity.