Selective synthesis of three-dimensional ZnO@Ag/SiO<sub>2</sub>@Ag nanorod arrays as surface-enhanced Raman scattering substrates with tunable interior dielectric layer<xref rid="cpb_28_12_124204fn1" ref-type="fn">*</xref><fn id="cpb_28_12_124204fn1"><label>*</label><p>Project supported by the Fund from the Science and Technology Department of Jilin Province, China (Grant No. 20170520108JH), the Beihua University Youth Nurtural Fund, China (Grant No. 2017QNJJL15), the Beihua University PhD Research Start-up Fund, China (Grant No. 202116140), and the Undergraduate Innovation Project, China (Grant No. 220718100).</p></fn>

Selective synthesis of three-dimensional ZnO@Ag/SiO₂@Ag nanorod arrays as surface-enhanced Raman scattering substrates with tunable interior dielectric layer**

Project supported by the Fund from the Science and Technology Department of Jilin Province, China (Grant No. 20170520108JH), the Beihua University Youth Nurtural Fund, China (Grant No. 2017QNJJL15), the Beihua University PhD Research Start-up Fund, China (Grant No. 202116140), and the Undergraduate Innovation Project, China (Grant No. 220718100).

Mu Jia-Jia^{1, †}, He Chang-Yi¹, Sun Wei-Jie², Guan Yue¹

(a) Surface-enhanced Raman scattering spectra of R6G molecules adsorbed on ZnO@Ag/SiO₂@Ag nanorods with different-thickness outer-layer Ag (S1: sputtering time 67 s, S2: sputtering time 200 s, S3: sputtering time 334 s, S4: sputtering time 470 s), (b) SERS spectra of R6G molecules adsorbed on ZnO@Ag/SiO₂@Ag nanorods with different-thickness Ag and dielectric layer SiO₂ with keeping inner layer 10-nm Ag constant (G1: 5-nm-thick SiO₂ layer + sputtering time 67-s out-layer Ag, G2: 2-nm-thick SiO₂ layer + sputtering time 67-s out-layer Ag, G3: 5-nm-thick SiO₂ layer + sputtering time 334-s out-layer Ag, G4: 2-nm-thick SiO₂ layer + sputtering time 334-s out-layer Ag).